Paolo Magnone, Giacomo Barletta, A. Magrì. Investigation of degradation mechanisms in low-voltage p-channel power MOSFETs under High Temperature Gate Bias stress. Microelectronics Reliability, 88:438-442, 2018. [doi]
@article{MagnoneBM18,
title = {Investigation of degradation mechanisms in low-voltage p-channel power MOSFETs under High Temperature Gate Bias stress},
author = {Paolo Magnone and Giacomo Barletta and A. Magrì},
year = {2018},
doi = {10.1016/j.microrel.2018.06.029},
url = {https://doi.org/10.1016/j.microrel.2018.06.029},
researchr = {https://researchr.org/publication/MagnoneBM18},
cites = {0},
citedby = {0},
journal = {Microelectronics Reliability},
volume = {88},
pages = {438-442},
}