Investigation of degradation mechanisms in low-voltage p-channel power MOSFETs under High Temperature Gate Bias stress

Paolo Magnone, Giacomo Barletta, A. Magrì. Investigation of degradation mechanisms in low-voltage p-channel power MOSFETs under High Temperature Gate Bias stress. Microelectronics Reliability, 88:438-442, 2018. [doi]

Abstract

Abstract is missing.