Ab initio modeling of resistive switching mechanism in binary metal oxides - researchr publication authors

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Blanka Magyari-Köpe, Liang Zhao, Yoshio Nishi, Katsumasa Kamiya, Moon Young Yang, Kenji Shiraishi. Ab initio modeling of resistive switching mechanism in binary metal oxides. In IEEE International Symposium on Circuits and Systemss, ISCAS 2014, Melbourne, Victoria, Australia, June 1-5, 2014. pages 2021-2024, IEEE, 2014. [doi]

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