Chandreswar Mahata, Wonwoo Kim, Shiwhan Kim, Muhammad Ismail, Min-Hwi Kim, Sungjun Kim, Byung-Gook Park. Reversible nonvolatile and threshold switching characteristics in Cu/high-k/Si devices. IEICE Electronic Express, 16(16):20190404, 2019. [doi]
@article{MahataKKIKKP19,
title = {Reversible nonvolatile and threshold switching characteristics in Cu/high-k/Si devices},
author = {Chandreswar Mahata and Wonwoo Kim and Shiwhan Kim and Muhammad Ismail and Min-Hwi Kim and Sungjun Kim and Byung-Gook Park},
year = {2019},
doi = {10.1587/elex.16.20190404},
url = {https://doi.org/10.1587/elex.16.20190404},
researchr = {https://researchr.org/publication/MahataKKIKKP19},
cites = {0},
citedby = {0},
journal = {IEICE Electronic Express},
volume = {16},
number = {16},
pages = {20190404},
}