The Evaluation of the Interface Properties of PdEr-Silicide on Si(100) Formed with TiN Encapsulating Layer and Dopant Segregation Process

Rengie Mark D. Mailig, Min Gee Kim, Shun'ichiro Ohmi. The Evaluation of the Interface Properties of PdEr-Silicide on Si(100) Formed with TiN Encapsulating Layer and Dopant Segregation Process. IEICE Trans. Electron., 103-C(6):286-292, 2020. [doi]

Abstract

Abstract is missing.