Tsz Yin Man, Mansun Chan. A 2-bit highly scalable nonvolatile memory cell with two electrically isolated charge trapping sites. Microelectronics Reliability, 45(2):349-354, 2005. [doi]
@article{ManC05,
title = {A 2-bit highly scalable nonvolatile memory cell with two electrically isolated charge trapping sites},
author = {Tsz Yin Man and Mansun Chan},
year = {2005},
doi = {10.1016/j.microrel.2004.08.016},
url = {http://dx.doi.org/10.1016/j.microrel.2004.08.016},
researchr = {https://researchr.org/publication/ManC05},
cites = {0},
citedby = {0},
journal = {Microelectronics Reliability},
volume = {45},
number = {2},
pages = {349-354},
}