RF simulations and physics of the channel noise parameters within MOS transistors - researchr publication authors

researchr

You are not signed in
Sign in
Sign up

Tajinder Manku, Michael S. Obrecht, Yi Lin. RF simulations and physics of the channel noise parameters within MOS transistors. In Proceedings of the IEEE 1999 Custom Integrated Circuits Conference, CICC 1999, San Diego, CA, USA, May 1649,1999. pages 369-372, IEEE, 1999. [doi]

This author has not been identified. Look up 'Tajinder Manku' in GoogleThis author has not been identified. Look up 'Michael S. Obrecht' in GoogleThis author has not been identified. Look up 'Yi Lin' in Google

runs on WebDSL