Characterization of the transient behavior of gated/STI diodes and their associated BJT in the CDM time domain

Jean-Robert Manouvrier, Pascal Fonteneau, Charles-Alexandre Legrand, Pascal Nouet, Florence Azaïs. Characterization of the transient behavior of gated/STI diodes and their associated BJT in the CDM time domain. Microelectronics Reliability, 49(12):1424-1432, 2009. [doi]

Abstract

Abstract is missing.