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Analysis of the non-monotonic dependence of FOM of β-Ga2O3 based Junctionless Field Effect Transistor on doping profile linearity in the drift region

V. R. Manukrishna, K. S. Nikhil. Analysis of the non-monotonic dependence of FOM of β-Ga2O3 based Junctionless Field Effect Transistor on doping profile linearity in the drift region. In 7th International Conference on Devices, Circuits and Systems, ICDCS 2024, Coimbatore, India, April 23-24, 2024. pages 282-286, IEEE, 2024. [doi]

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