Study of mechanical stress impact on the I-V characteristics of a power VDMOS device using 2D FEM simulations - researchr publication authors

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E. Marcault, M. Breil, A. Bourennane, Patrick Tounsi, Jean-Marie Dorkel. Study of mechanical stress impact on the I-V characteristics of a power VDMOS device using 2D FEM simulations. Microelectronics Reliability, 52(3):489-496, 2012. [doi]

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