Study of mechanical stress impact on the I-V characteristics of a power VDMOS device using 2D FEM simulations

E. Marcault, M. Breil, A. Bourennane, Patrick Tounsi, Jean-Marie Dorkel. Study of mechanical stress impact on the I-V characteristics of a power VDMOS device using 2D FEM simulations. Microelectronics Reliability, 52(3):489-496, 2012. [doi]

Abstract

Abstract is missing.