Reliability of AlGaN/GaN HEMTs: Permanent leakage current increase and output current drop

Denis Marcon, J. Viaene, P. Favia, H. Bender, Xuanwu Kang, S. Lenci, S. Stoffels, Stefaan Decoutere. Reliability of AlGaN/GaN HEMTs: Permanent leakage current increase and output current drop. Microelectronics Reliability, 52(9-10):2188-2193, 2012. [doi]

@article{MarconVFBKLSD12,
  title = {Reliability of AlGaN/GaN HEMTs: Permanent leakage current increase and output current drop},
  author = {Denis Marcon and J. Viaene and P. Favia and H. Bender and Xuanwu Kang and S. Lenci and S. Stoffels and Stefaan Decoutere},
  year = {2012},
  doi = {10.1016/j.microrel.2012.06.052},
  url = {http://dx.doi.org/10.1016/j.microrel.2012.06.052},
  researchr = {https://researchr.org/publication/MarconVFBKLSD12},
  cites = {0},
  citedby = {0},
  journal = {Microelectronics Reliability},
  volume = {52},
  number = {9-10},
  pages = {2188-2193},
}