Reliability of AlGaN/GaN HEMTs: Permanent leakage current increase and output current drop

Denis Marcon, J. Viaene, P. Favia, H. Bender, Xuanwu Kang, S. Lenci, S. Stoffels, Stefaan Decoutere. Reliability of AlGaN/GaN HEMTs: Permanent leakage current increase and output current drop. Microelectronics Reliability, 52(9-10):2188-2193, 2012. [doi]

Abstract

Abstract is missing.