A 3bit/cell 32Gb NAND flash memory at 34nm with 6MB/s program throughput and with dynamic 2b/cell blocks configuration mode for a program throughput increase up to 13MB/s

G. G. Marotta, A. Macerola, A. D'Alessandro, A. Torsi, C. Cerafogli, C. Lattaro, C. Musilli, D. Rivers, E. Sirizotti, F. Paolini, G. Imondi, G. Naso, G. Santin, L. Botticchio, L. De Santis, L. Pilolli, M. L. Gallese, M. Incarnati, M. Tiburzi, P. Conenna, S. Perugini, V. Moschiano, W. Di Francesco, Matt Goldman, Chris Haid, D. Di Cicco, D. Orlandi, F. Rori, Massimo Rossini, Tommaso Vali, R. Ghodsi, Frank Roohparvar. A 3bit/cell 32Gb NAND flash memory at 34nm with 6MB/s program throughput and with dynamic 2b/cell blocks configuration mode for a program throughput increase up to 13MB/s. In IEEE International Solid-State Circuits Conference, ISSCC 2010, Digest of Technical Papers, San Francisco, CA, USA, 7-11 February, 2010. pages 444-445, IEEE, 2010. [doi]

Authors

G. G. Marotta

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A. Macerola

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A. D'Alessandro

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A. Torsi

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C. Cerafogli

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C. Lattaro

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C. Musilli

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D. Rivers

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E. Sirizotti

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F. Paolini

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G. Imondi

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G. Naso

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G. Santin

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L. Botticchio

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L. De Santis

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L. Pilolli

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M. L. Gallese

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M. Incarnati

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M. Tiburzi

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P. Conenna

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S. Perugini

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V. Moschiano

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W. Di Francesco

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Matt Goldman

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Chris Haid

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D. Di Cicco

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D. Orlandi

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F. Rori

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Massimo Rossini

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Tommaso Vali

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R. Ghodsi

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Frank Roohparvar

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