G. G. Marotta, A. Macerola, A. D'Alessandro, A. Torsi, C. Cerafogli, C. Lattaro, C. Musilli, D. Rivers, E. Sirizotti, F. Paolini, G. Imondi, G. Naso, G. Santin, L. Botticchio, L. De Santis, L. Pilolli, M. L. Gallese, M. Incarnati, M. Tiburzi, P. Conenna, S. Perugini, V. Moschiano, W. Di Francesco, Matt Goldman, Chris Haid, D. Di Cicco, D. Orlandi, F. Rori, Massimo Rossini, Tommaso Vali, R. Ghodsi, Frank Roohparvar. A 3bit/cell 32Gb NAND flash memory at 34nm with 6MB/s program throughput and with dynamic 2b/cell blocks configuration mode for a program throughput increase up to 13MB/s. In IEEE International Solid-State Circuits Conference, ISSCC 2010, Digest of Technical Papers, San Francisco, CA, USA, 7-11 February, 2010. pages 444-445, IEEE, 2010. [doi]
Abstract is missing.