4.5-/4.9-GHz-Band Selective High-Efficiency GaN HEMT Power Amplifier by Characteristic Impedance Switching

Kazuki Mashimo, Ryo Ishikawa, Kazuhiko Honjo. 4.5-/4.9-GHz-Band Selective High-Efficiency GaN HEMT Power Amplifier by Characteristic Impedance Switching. IEICE Transactions, 101-C(10):751-758, 2018. [doi]

Abstract

Abstract is missing.