Takashi Masuda, Ryota Shinoda, Jeremy Chatwin, Jacob Wysocki, Koki Uchino, Yoshifumi Miyajima, Yosuke Ueno, Kenichi Maruko, Zhiwei Zhou, Hideyuki Matsumoto, Hideyuki Suzuki, Norio Shoji. 10.4 A 12Gb/s 0.9mW/Gb/s wide-bandwidth injection-type CDR in 28nm CMOS with reference-free frequency capture. In 2016 IEEE International Solid-State Circuits Conference, ISSCC 2016, San Francisco, CA, USA, January 31 - February 4, 2016. pages 188-189, IEEE, 2016. [doi]
@inproceedings{MasudaSCWUMUMZM16,
title = {10.4 A 12Gb/s 0.9mW/Gb/s wide-bandwidth injection-type CDR in 28nm CMOS with reference-free frequency capture},
author = {Takashi Masuda and Ryota Shinoda and Jeremy Chatwin and Jacob Wysocki and Koki Uchino and Yoshifumi Miyajima and Yosuke Ueno and Kenichi Maruko and Zhiwei Zhou and Hideyuki Matsumoto and Hideyuki Suzuki and Norio Shoji},
year = {2016},
doi = {10.1109/ISSCC.2016.7417970},
url = {http://dx.doi.org/10.1109/ISSCC.2016.7417970},
researchr = {https://researchr.org/publication/MasudaSCWUMUMZM16},
cites = {0},
citedby = {0},
pages = {188-189},
booktitle = {2016 IEEE International Solid-State Circuits Conference, ISSCC 2016, San Francisco, CA, USA, January 31 - February 4, 2016},
publisher = {IEEE},
isbn = {978-1-4673-9467-3},
}