10.4 A 12Gb/s 0.9mW/Gb/s wide-bandwidth injection-type CDR in 28nm CMOS with reference-free frequency capture

Takashi Masuda, Ryota Shinoda, Jeremy Chatwin, Jacob Wysocki, Koki Uchino, Yoshifumi Miyajima, Yosuke Ueno, Kenichi Maruko, Zhiwei Zhou, Hideyuki Matsumoto, Hideyuki Suzuki, Norio Shoji. 10.4 A 12Gb/s 0.9mW/Gb/s wide-bandwidth injection-type CDR in 28nm CMOS with reference-free frequency capture. In 2016 IEEE International Solid-State Circuits Conference, ISSCC 2016, San Francisco, CA, USA, January 31 - February 4, 2016. pages 188-189, IEEE, 2016. [doi]

Abstract

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