Monte Carlo simulation of electronic characteristics in short channel delta-doped AlInAs/GaInAs HEMTs

Javier Mateos, Tomás González, Daniel Pardo, Virginie Hoel, Alain Cappy. Monte Carlo simulation of electronic characteristics in short channel delta-doped AlInAs/GaInAs HEMTs. Microelectronics Reliability, 41(1):73-77, 2001. [doi]

Abstract

Abstract is missing.