Benjamin Max, Michael Hoffmann, Stefan Slesazeck, Thomas Mikolajick. Ferroelectric Tunnel Junctions based on Ferroelectric-Dielectric Hf0.5Zr0.5.O2/ A12O3Capacitor Stacks. In 48th European Solid-State Device Research Conference, ESSDERC 2018, Dresden, Germany, September 3-6, 2018. pages 142-145, IEEE, 2018. [doi]
@inproceedings{MaxHSM18, title = {Ferroelectric Tunnel Junctions based on Ferroelectric-Dielectric Hf0.5Zr0.5.O2/ A12O3Capacitor Stacks}, author = {Benjamin Max and Michael Hoffmann and Stefan Slesazeck and Thomas Mikolajick}, year = {2018}, doi = {10.1109/ESSDERC.2018.8486882}, url = {https://doi.org/10.1109/ESSDERC.2018.8486882}, researchr = {https://researchr.org/publication/MaxHSM18}, cites = {0}, citedby = {0}, pages = {142-145}, booktitle = {48th European Solid-State Device Research Conference, ESSDERC 2018, Dresden, Germany, September 3-6, 2018}, publisher = {IEEE}, isbn = {978-1-5386-5401-9}, }