Gate oxide degradation of SiC MOSFET under short-circuit aging tests - researchr publication authors

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S. Mbarek, F. Fouquet, Pascal Dherbécourt, Mohamed Masmoudi, Olivier Latry. Gate oxide degradation of SiC MOSFET under short-circuit aging tests. Microelectronics Reliability, 64:415-418, 2016. [doi]

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