S. Mbarek, F. Fouquet, Pascal Dherbécourt, Mohamed Masmoudi, Olivier Latry. Gate oxide degradation of SiC MOSFET under short-circuit aging tests. Microelectronics Reliability, 64:415-418, 2016. [doi]
@article{MbarekFDML16,
title = {Gate oxide degradation of SiC MOSFET under short-circuit aging tests},
author = {S. Mbarek and F. Fouquet and Pascal Dherbécourt and Mohamed Masmoudi and Olivier Latry},
year = {2016},
doi = {10.1016/j.microrel.2016.07.132},
url = {http://dx.doi.org/10.1016/j.microrel.2016.07.132},
researchr = {https://researchr.org/publication/MbarekFDML16},
cites = {0},
citedby = {0},
journal = {Microelectronics Reliability},
volume = {64},
pages = {415-418},
}