Flexible metal-insulator-metal capacitor using plasma enhanced binary hafnium-zirconium-oxide as gate dielectric layer

Jagan Singh Meena, Min-Ching Chu, Jitendra N. Tiwari, Hsin-Chiang You, Chung-Hsin Wu, Fu-Hsiang Ko. Flexible metal-insulator-metal capacitor using plasma enhanced binary hafnium-zirconium-oxide as gate dielectric layer. Microelectronics Reliability, 50(5):652-656, 2010. [doi]

Abstract

Abstract is missing.