Static and Dynamic Characterization of 1200 V SiC MOSFETs at Room and Cryogenic Temperatures

Mahmoud Mehrabankhomartash, Shiyuan Yin, Alfonso J. Cruz, Lukas Graber, Maryam Saeedifard, Simon Evans, Florian Kapaun, Ivan Revel, Gerhard Steiner, Ludovic Ybanez, Chanyeop Park. Static and Dynamic Characterization of 1200 V SiC MOSFETs at Room and Cryogenic Temperatures. In IECON 2021 - 47th Annual Conference of the IEEE Industrial Electronics Society, Toronto, ON, Canada, October 13-16, 2021. pages 1-6, IEEE, 2021. [doi]

Abstract

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