2 defect size in Ni/dielectric/Si RRAM devices - researchr publication authors

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Sen Mei, Michel Bosman, Nagarajan Raghavan, Xing Wu, Kin Leong Pey. 2 defect size in Ni/dielectric/Si RRAM devices. Microelectronics Reliability, 61:71-77, 2016. [doi]

This author has not been identified. Look up 'Sen Mei' in GoogleThis author has not been identified. Look up 'Michel Bosman' in GoogleThis author has not been identified. Look up 'Nagarajan Raghavan' in GoogleThis author has not been identified. Look up 'Xing Wu' in GoogleThis author has not been identified. Look up 'Kin Leong Pey' in Google

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