Sen Mei, Michel Bosman, Nagarajan Raghavan, Xing Wu, Kin Leong Pey. 2 defect size in Ni/dielectric/Si RRAM devices. Microelectronics Reliability, 61:71-77, 2016. [doi]
@article{MeiBRWP16,
title = {2 defect size in Ni/dielectric/Si RRAM devices},
author = {Sen Mei and Michel Bosman and Nagarajan Raghavan and Xing Wu and Kin Leong Pey},
year = {2016},
doi = {10.1016/j.microrel.2015.12.037},
url = {http://dx.doi.org/10.1016/j.microrel.2015.12.037},
researchr = {https://researchr.org/publication/MeiBRWP16},
cites = {0},
citedby = {0},
journal = {Microelectronics Reliability},
volume = {61},
pages = {71-77},
}