Evidence for temperature-dependent buffer-induced trapping in GaN-on-silicon power transistors

Matteo Meneghini, R. Silvestri, Stefano Dalcanale, Davide Bisi, Enrico Zanoni, Gaudenzio Meneghesso, Piet Vanmeerbeek, A. Banerjee, Peter Moens. Evidence for temperature-dependent buffer-induced trapping in GaN-on-silicon power transistors. In IEEE International Reliability Physics Symposium, IRPS 2015, Monterey, CA, USA, April 19-23, 2015. pages 2, IEEE, 2015. [doi]

Abstract

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