Modeling of metal-oxide-semiconductor capacitor on Indium Gallium Nitride 1- channel model

Tarik Menkad, Dimiter Alexandrov, Kenneth Scott A. Butcher. Modeling of metal-oxide-semiconductor capacitor on Indium Gallium Nitride 1- channel model. In 25th IEEE Canadian Conference on Electrical and Computer Engineering, CCECE 2012, Montreal, QC, Canada, April 29 - May 2, 2012. pages 1-7, IEEE, 2012. [doi]

@inproceedings{MenkadAB12,
  title = {Modeling of metal-oxide-semiconductor capacitor on Indium Gallium Nitride 1- channel model},
  author = {Tarik Menkad and Dimiter Alexandrov and Kenneth Scott A. Butcher},
  year = {2012},
  doi = {10.1109/CCECE.2012.6334924},
  url = {http://dx.doi.org/10.1109/CCECE.2012.6334924},
  researchr = {https://researchr.org/publication/MenkadAB12},
  cites = {0},
  citedby = {0},
  pages = {1-7},
  booktitle = {25th IEEE Canadian Conference on Electrical and Computer Engineering, CCECE 2012, Montreal, QC, Canada, April 29 - May 2, 2012},
  publisher = {IEEE},
  isbn = {978-1-4673-1431-2},
}