Modeling of metal-oxide-semiconductor capacitor on Indium Gallium Nitride 1- channel model

Tarik Menkad, Dimiter Alexandrov, Kenneth Scott A. Butcher. Modeling of metal-oxide-semiconductor capacitor on Indium Gallium Nitride 1- channel model. In 25th IEEE Canadian Conference on Electrical and Computer Engineering, CCECE 2012, Montreal, QC, Canada, April 29 - May 2, 2012. pages 1-7, IEEE, 2012. [doi]

Abstract

Abstract is missing.