The characteristics of fluorinated gate dielectric AlGaN/GaN MIS-HEMT

Minhan Mi, Yunlong He, Bin Hou, Meng Zhang, Zuo-Chen Shi, Xiaohua Ma, Peixian Li, Yue Hao. The characteristics of fluorinated gate dielectric AlGaN/GaN MIS-HEMT. IEICE Electronic Express, 12(24):20150943, 2015. [doi]

@article{MiHHZSMLH15,
  title = {The characteristics of fluorinated gate dielectric AlGaN/GaN MIS-HEMT},
  author = {Minhan Mi and Yunlong He and Bin Hou and Meng Zhang and Zuo-Chen Shi and Xiaohua Ma and Peixian Li and Yue Hao},
  year = {2015},
  url = {https://www.jstage.jst.go.jp/article/elex/12/24/12_12.20150943/_article},
  researchr = {https://researchr.org/publication/MiHHZSMLH15},
  cites = {0},
  citedby = {0},
  journal = {IEICE Electronic Express},
  volume = {12},
  number = {24},
  pages = {20150943},
}