CMOS Compatible Hf 0.5 Zr 0.5 O 2 Ferroelectric Tunnel Junctions for Neuromorphic Devices - researchr publication authors

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Bernhard Mittermeier, Andreas Dörfler, Anna Horoschenkoff, Rajesh Katoch, Christina Schindler, Andreas Ruediger, Gitanjali Kolhatkar. CMOS Compatible Hf 0.5 Zr 0.5 O 2 Ferroelectric Tunnel Junctions for Neuromorphic Devices. Adv. Intell. Syst., 1(5):1900034, 2019. [doi]

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