Bernhard Mittermeier, Andreas Dörfler, Anna Horoschenkoff, Rajesh Katoch, Christina Schindler, Andreas Ruediger, Gitanjali Kolhatkar. CMOS Compatible Hf 0.5 Zr 0.5 O 2 Ferroelectric Tunnel Junctions for Neuromorphic Devices. Adv. Intell. Syst., 1(5):1900034, 2019. [doi]
@article{MittermeierDHKS19,
title = {CMOS Compatible Hf 0.5 Zr 0.5 O 2 Ferroelectric Tunnel Junctions for Neuromorphic Devices},
author = {Bernhard Mittermeier and Andreas Dörfler and Anna Horoschenkoff and Rajesh Katoch and Christina Schindler and Andreas Ruediger and Gitanjali Kolhatkar},
year = {2019},
doi = {10.1002/aisy.201900034},
url = {https://doi.org/10.1002/aisy.201900034},
researchr = {https://researchr.org/publication/MittermeierDHKS19},
cites = {0},
citedby = {0},
journal = {Adv. Intell. Syst.},
volume = {1},
number = {5},
pages = {1900034},
}