Simulation of the Short Channel Effect in GaN HEMT with a Combined Thin Undoped Channel and Semi-Insulating Layer

Yasuyuki Miyamoto, Takahiro Gotow. Simulation of the Short Channel Effect in GaN HEMT with a Combined Thin Undoped Channel and Semi-Insulating Layer. IEICE Trans. Electron., 103-C(6):304-307, 2020. [doi]

Abstract

Abstract is missing.