Shin Miyamoto, Nobuaki Kobayashi. Development of High-Stability, Low-Leakage 6Tr-SRAM with Single Data Line and Single Power Supply Using SOTB Process. In 2018 IEEE Computer Society Annual Symposium on VLSI, ISVLSI 2018, Hong Kong, China, July 8-11, 2018. pages 387-392, IEEE Computer Society, 2018. [doi]
@inproceedings{MiyamotoK18,
title = {Development of High-Stability, Low-Leakage 6Tr-SRAM with Single Data Line and Single Power Supply Using SOTB Process},
author = {Shin Miyamoto and Nobuaki Kobayashi},
year = {2018},
doi = {10.1109/ISVLSI.2018.00077},
url = {http://doi.ieeecomputersociety.org/10.1109/ISVLSI.2018.00077},
researchr = {https://researchr.org/publication/MiyamotoK18},
cites = {0},
citedby = {0},
pages = {387-392},
booktitle = {2018 IEEE Computer Society Annual Symposium on VLSI, ISVLSI 2018, Hong Kong, China, July 8-11, 2018},
publisher = {IEEE Computer Society},
isbn = {978-1-5386-7099-6},
}