Kazuhiro Mochizuki, Ken-ichi Tanaka, Takashi Shiota, Takafumi Taniguchi, Hiroyuki Uchiyama. Effects of Rapid Thermal Annealing on Bias-Stress-Induced Base Leakage in InGaP/GaAs Collector-Up Heterojunction Bipolar Transistors Fabricated with B Ion Implantation. IEICE Transactions, 89-C(7):943-948, 2006. [doi]
@article{MochizukiTSTU06,
title = {Effects of Rapid Thermal Annealing on Bias-Stress-Induced Base Leakage in InGaP/GaAs Collector-Up Heterojunction Bipolar Transistors Fabricated with B Ion Implantation},
author = {Kazuhiro Mochizuki and Ken-ichi Tanaka and Takashi Shiota and Takafumi Taniguchi and Hiroyuki Uchiyama},
year = {2006},
doi = {10.1093/ietele/e89-c.7.943},
url = {http://dx.doi.org/10.1093/ietele/e89-c.7.943},
researchr = {https://researchr.org/publication/MochizukiTSTU06},
cites = {0},
citedby = {0},
journal = {IEICE Transactions},
volume = {89-C},
number = {7},
pages = {943-948},
}