A 128 kb single-bitline 8.4 fJ/bit 90MHz at 0.3V 7T sense-amplifierless SRAM in 28 nm FD-SOI

Babak Mohammadi, Oskar Andersson, Joseph Nguyen, Lorenzo Ciampolini, Andreia Cathelin, Joachim Neves Rodrigues. A 128 kb single-bitline 8.4 fJ/bit 90MHz at 0.3V 7T sense-amplifierless SRAM in 28 nm FD-SOI. In nd European Solid-State Circuits Conference, Lausanne, Switzerland, September 12-15, 2016. pages 429-432, IEEE, 2016. [doi]

@inproceedings{MohammadiANCCR16,
  title = {A 128 kb single-bitline 8.4 fJ/bit 90MHz at 0.3V 7T sense-amplifierless SRAM in 28 nm FD-SOI},
  author = {Babak Mohammadi and Oskar Andersson and Joseph Nguyen and Lorenzo Ciampolini and Andreia Cathelin and Joachim Neves Rodrigues},
  year = {2016},
  doi = {10.1109/ESSCIRC.2016.7598333},
  url = {http://dx.doi.org/10.1109/ESSCIRC.2016.7598333},
  researchr = {https://researchr.org/publication/MohammadiANCCR16},
  cites = {0},
  citedby = {0},
  pages = {429-432},
  booktitle = {nd European Solid-State Circuits Conference, Lausanne, Switzerland, September 12-15, 2016},
  publisher = {IEEE},
  isbn = {978-1-5090-2972-3},
}