Design of Energy Efficient SRAM Cell Based on Double Gate Schottky-Barrier-Type GNRFET with Minimum Dimer Lines - researchr publication authors

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Mahmood Uddin Mohammed, Masud H. Chowdhury. Design of Energy Efficient SRAM Cell Based on Double Gate Schottky-Barrier-Type GNRFET with Minimum Dimer Lines. In IEEE International Symposium on Circuits and Systems, ISCAS 2019, Sapporo, Japan, May 26-29, 2019. pages 1-4, IEEE, 2019. [doi]

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