Mahmood Uddin Mohammed, Masud H. Chowdhury. Design of Energy Efficient SRAM Cell Based on Double Gate Schottky-Barrier-Type GNRFET with Minimum Dimer Lines. In IEEE International Symposium on Circuits and Systems, ISCAS 2019, Sapporo, Japan, May 26-29, 2019. pages 1-4, IEEE, 2019. [doi]
@inproceedings{MohammedC19,
title = {Design of Energy Efficient SRAM Cell Based on Double Gate Schottky-Barrier-Type GNRFET with Minimum Dimer Lines},
author = {Mahmood Uddin Mohammed and Masud H. Chowdhury},
year = {2019},
doi = {10.1109/ISCAS.2019.8702422},
url = {https://doi.org/10.1109/ISCAS.2019.8702422},
researchr = {https://researchr.org/publication/MohammedC19},
cites = {0},
citedby = {0},
pages = {1-4},
booktitle = {IEEE International Symposium on Circuits and Systems, ISCAS 2019, Sapporo, Japan, May 26-29, 2019},
publisher = {IEEE},
isbn = {978-1-7281-0397-6},
}