Nitin Mohan, Manoj Sachdev. Low-Leakage Storage Cells for Ternary Content Addressable Memories. IEEE Trans. VLSI Syst., 17(5):604-612, 2009. [doi]
@article{MohanS09,
title = {Low-Leakage Storage Cells for Ternary Content Addressable Memories},
author = {Nitin Mohan and Manoj Sachdev},
year = {2009},
doi = {10.1109/TVLSI.2008.2006040},
url = {http://dx.doi.org/10.1109/TVLSI.2008.2006040},
researchr = {https://researchr.org/publication/MohanS09},
cites = {0},
citedby = {0},
journal = {IEEE Trans. VLSI Syst.},
volume = {17},
number = {5},
pages = {604-612},
}