Quentin Molin, Mehdi Kanoun, Christophe Raynaud, Hervé Morel. Robustness study of 1700 V 45 mΩ SiC MOSFETs. In IEEE International Conference on Industrial Technology, ICIT 2018, Lyon, France, February 20-22, 2018. pages 830-834, IEEE, 2018. [doi]
@inproceedings{MolinKRM18-0,
title = {Robustness study of 1700 V 45 mΩ SiC MOSFETs},
author = {Quentin Molin and Mehdi Kanoun and Christophe Raynaud and Hervé Morel},
year = {2018},
doi = {10.1109/ICIT.2018.8352285},
url = {https://doi.org/10.1109/ICIT.2018.8352285},
researchr = {https://researchr.org/publication/MolinKRM18-0},
cites = {0},
citedby = {0},
pages = {830-834},
booktitle = {IEEE International Conference on Industrial Technology, ICIT 2018, Lyon, France, February 20-22, 2018},
publisher = {IEEE},
isbn = {978-1-5090-5949-2},
}