Nitrogen bonding configurations near the oxynitride/silicon interface after oxynitridation in N::2::O ambient of a thin SiO::2:: gate

F. Monforte, M. Camalleri, D. Calì, G. Currò, E. Fazio, F. Neri. Nitrogen bonding configurations near the oxynitride/silicon interface after oxynitridation in N::2::O ambient of a thin SiO::2:: gate. Microelectronics Reliability, 47(4-5):822-824, 2007. [doi]

@article{MonforteCCCFN07,
  title = {Nitrogen bonding configurations near the oxynitride/silicon interface after oxynitridation in N::2::O ambient of a thin SiO::2:: gate},
  author = {F. Monforte and M. Camalleri and D. Calì and G. Currò and E. Fazio and F. Neri},
  year = {2007},
  doi = {10.1016/j.microrel.2007.01.037},
  url = {http://dx.doi.org/10.1016/j.microrel.2007.01.037},
  researchr = {https://researchr.org/publication/MonforteCCCFN07},
  cites = {0},
  citedby = {0},
  journal = {Microelectronics Reliability},
  volume = {47},
  number = {4-5},
  pages = {822-824},
}