Nitrogen bonding configurations near the oxynitride/silicon interface after oxynitridation in N::2::O ambient of a thin SiO::2:: gate

F. Monforte, M. Camalleri, D. Calì, G. Currò, E. Fazio, F. Neri. Nitrogen bonding configurations near the oxynitride/silicon interface after oxynitridation in N::2::O ambient of a thin SiO::2:: gate. Microelectronics Reliability, 47(4-5):822-824, 2007. [doi]

Abstract

Abstract is missing.