Improved read and write margins using a novel 8T-SRAM cell - researchr publication authors

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Farshad Moradi, Jens Kargaard Madsen. Improved read and write margins using a novel 8T-SRAM cell. In Lorena Garcia, editor, 22nd International Conference on Very Large Scale Integration, VLSI-SoC, Playa del Carmen, Mexico, October 6-8, 2014. pages 1-5, IEEE, 2014. [doi]

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