Farshad Moradi, Jens Kargaard Madsen. Improved read and write margins using a novel 8T-SRAM cell. In Lorena Garcia, editor, 22nd International Conference on Very Large Scale Integration, VLSI-SoC, Playa del Carmen, Mexico, October 6-8, 2014. pages 1-5, IEEE, 2014. [doi]
@inproceedings{MoradiM14,
title = {Improved read and write margins using a novel 8T-SRAM cell},
author = {Farshad Moradi and Jens Kargaard Madsen},
year = {2014},
doi = {10.1109/VLSI-SoC.2014.7004186},
url = {http://dx.doi.org/10.1109/VLSI-SoC.2014.7004186},
researchr = {https://researchr.org/publication/MoradiM14},
cites = {0},
citedby = {0},
pages = {1-5},
booktitle = {22nd International Conference on Very Large Scale Integration, VLSI-SoC, Playa del Carmen, Mexico, October 6-8, 2014},
editor = {Lorena Garcia},
publisher = {IEEE},
isbn = {978-1-4799-6016-3},
}