A new physics-based compact model for Bilayer Graphene Field-Effect Transistors - researchr publication authors

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Jorgue Daniel Aguirre Morales, Sébastien Fregonese, C. Mukherjee, Cristell Maneux, Thomas Zimmer. A new physics-based compact model for Bilayer Graphene Field-Effect Transistors. In 45th European Solid State Device Research Conference, ESSDERC 2015, Graz, Austria, September 14-18, 2015. pages 180-183, IEEE, 2015. [doi]

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