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The effect of atomic layer deposition temperature on switching properties of HfOx resistive RAM devices

Katrina A. Morgan, Ruomeng Huang, Stuart Pearce, C. H. De Groot. The effect of atomic layer deposition temperature on switching properties of HfOx resistive RAM devices. In IEEE International Symposium on Circuits and Systemss, ISCAS 2014, Melbourne, Victoria, Australia, June 1-5, 2014. pages 432-435, IEEE, 2014. [doi]

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Katrina A. Morgan

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Ruomeng Huang

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Stuart Pearce

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C. H. De Groot

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