Two-step annealing effects on ultrathin EOT higher-k (k = 40) ALD-HfO2 gate stacks - researchr publication authors

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Yukinori Morita, Shinji Migita, Wataru Mizubayashi, Meishoku Masahara, Hiroyuki Ota. Two-step annealing effects on ultrathin EOT higher-k (k = 40) ALD-HfO2 gate stacks. In Proceedings of the 2012 European Solid-State Device Research Conference, ESSDERC 2012, Bordeaux, France, September 17-21, 2012. pages 81-84, IEEE, 2012. [doi]

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