Two-step annealing effects on ultrathin EOT higher-k (k = 40) ALD-HfO2 gate stacks

Yukinori Morita, Shinji Migita, Wataru Mizubayashi, Meishoku Masahara, Hiroyuki Ota. Two-step annealing effects on ultrathin EOT higher-k (k = 40) ALD-HfO2 gate stacks. In Proceedings of the 2012 European Solid-State Device Research Conference, ESSDERC 2012, Bordeaux, France, September 17-21, 2012. pages 81-84, IEEE, 2012. [doi]

@inproceedings{MoritaMMMO12,
  title = {Two-step annealing effects on ultrathin EOT higher-k (k = 40) ALD-HfO2 gate stacks},
  author = {Yukinori Morita and Shinji Migita and Wataru Mizubayashi and Meishoku Masahara and Hiroyuki Ota},
  year = {2012},
  doi = {10.1109/ESSDERC.2012.6343338},
  url = {http://dx.doi.org/10.1109/ESSDERC.2012.6343338},
  researchr = {https://researchr.org/publication/MoritaMMMO12},
  cites = {0},
  citedby = {0},
  pages = {81-84},
  booktitle = {Proceedings of the 2012 European Solid-State Device Research Conference, ESSDERC 2012, Bordeaux, France, September 17-21, 2012},
  publisher = {IEEE},
  isbn = {978-1-4673-1707-8},
}