Transistor design for 5nm and beyond: Slowing down electrons to speed up transistors

Victor Moroz, Joanne Huang, Reza Arghavani. Transistor design for 5nm and beyond: Slowing down electrons to speed up transistors. In 17th International Symposium on Quality Electronic Design, ISQED 2016, Santa Clara, CA, USA, March 15-16, 2016. pages 278-283, IEEE, 2016. [doi]

@inproceedings{MorozHA16,
  title = {Transistor design for 5nm and beyond: Slowing down electrons to speed up transistors},
  author = {Victor Moroz and Joanne Huang and Reza Arghavani},
  year = {2016},
  doi = {10.1109/ISQED.2016.7479214},
  url = {http://dx.doi.org/10.1109/ISQED.2016.7479214},
  researchr = {https://researchr.org/publication/MorozHA16},
  cites = {0},
  citedby = {0},
  pages = {278-283},
  booktitle = {17th International Symposium on Quality Electronic Design, ISQED 2016, Santa Clara, CA, USA, March 15-16, 2016},
  publisher = {IEEE},
  isbn = {978-1-5090-1213-8},
}