TCAD simulation capabilities towards gate leakage current analysis of advanced AlGaN/GaN HEMT devices

K. Mukherjee, Frédéric Darracq, A. Curutchet, Nathalie Malbert, Nathalie Labat. TCAD simulation capabilities towards gate leakage current analysis of advanced AlGaN/GaN HEMT devices. Microelectronics Reliability, 76:350-356, 2017. [doi]

Abstract

Abstract is missing.